A study led by Nagoya University in Japan revealed that a simple thermal reaction of gallium nitride (GaN) with metallic magnesium (Mg) results in the formation of a distinctive superlattice structure. This represents the first time researchers have identified the insertion of 2D metal layers into a bulk semiconductor. A study led by Nagoya University in Japan revealed that a simple thermal reaction of gallium nitride (GaN) with metallic magnesium (Mg) results in the formation of a distinctive superlattice structure. This represents the first time researchers have identified the insertion of 2D metal layers into a bulk semiconductor. Condensed Matter Phys.org – latest science and technology news stories