A research team, led by Professor Jimin Kwon from the Department of Electrical Engineering at UNIST, in collaboration with Professor Yong-Young Noh and his research team from the Department of Chemical Engineering at POSTECH, reports a new technology to eliminate defects in molybdenum disulfide (MoS2), a promising candidate for the next generation of semiconductor materials, at a temperature of 200°C. A research team, led by Professor Jimin Kwon from the Department of Electrical Engineering at UNIST, in collaboration with Professor Yong-Young Noh and his research team from the Department of Chemical Engineering at POSTECH, reports a new technology to eliminate defects in molybdenum disulfide (MoS2), a promising candidate for the next generation of semiconductor materials, at a temperature of 200°C. Nanophysics Nanomaterials Phys.org – latest science and technology news stories
Defect removal technique paves the way for faster, low-power semiconductors
