National University of Singapore (NUS) researchers have developed a novel phase-selective in-plane heteroepitaxial strategy for growing two-dimensional transition metal dichalcogenides (2D TMDs). This approach provides a promising method for phase engineering of 2D TMDs and fabricating 2D heterostructure devices. National University of Singapore (NUS) researchers have developed a novel phase-selective in-plane heteroepitaxial strategy for growing two-dimensional transition metal dichalcogenides (2D TMDs). This approach provides a promising method for phase engineering of 2D TMDs and fabricating 2D heterostructure devices. Nanomaterials Phys.org – latest science and technology news stories
Researchers develop a novel strategy for growing two-dimensional transition metal dichalcogenides
