Study reveals potential of superparaelectric materials as gate dielectrics in next-gen microelectronics

In our communication-centered society, Moore’s law sets a high expectation for the increasing rate of the packing density of Si-based transistors. This drives the search for thickness-scalable high dielectric constant (high k) gate layers. Current material candidates, from simple binary oxides to complex polar oxides, all have failed to solve the “polarizability-scalability-insulation robustness” trilemma, hence contributing to the sum total of issues threatening the continuation of the Moore’s law. In our communication-centered society, Moore’s law sets a high expectation for the increasing rate of the packing density of Si-based transistors. This drives the search for thickness-scalable high dielectric constant (high k) gate layers. Current material candidates, from simple binary oxides to complex polar oxides, all have failed to solve the “polarizability-scalability-insulation robustness” trilemma, hence contributing to the sum total of issues threatening the continuation of the Moore’s law. Nanophysics Nanomaterials Phys.org – latest science and technology news stories