A group of Carnegie Mellon University researchers recently devised a method allowing them to create large amounts of a material required to make two-dimensional (2D) semiconductors with record high performance. Their paper, published in ACS Applied Materials & Interfaces in late December 2024, could lead to more efficient and tunable photodetectors, paving the way for the next generation of light-sensing and multifunctional optoelectronic devices. A group of Carnegie Mellon University researchers recently devised a method allowing them to create large amounts of a material required to make two-dimensional (2D) semiconductors with record high performance. Their paper, published in ACS Applied Materials & Interfaces in late December 2024, could lead to more efficient and tunable photodetectors, paving the way for the next generation of light-sensing and multifunctional optoelectronic devices. Nanophysics Nanomaterials Phys.org – latest science and technology news stories
Tellurium boosts 2D semiconductor performance for faster photodetection
